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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 80V | 12100pF @ 40V | 300W (Tc) | 120A (Tc) | 6V, 10V | 2.3 mOhm @ 100A, 10V | 3.8V @ 208µA | 166nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 80V 140A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 80V | 12100pF @ 40V | 300W (Tc) | 120A (Tc) | 6V, 10V | 2 mOhm @ 100A, 10V | 3.8V @ 208µA | 166nC @ 10V | ±20V | - |