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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3-1 | N-Channel | 60V | 4900pF @ 30V | 79W (Tc) | 50A (Tc) | 4.5V, 10V | 8.4 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 50A TO-220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 60V | 4900pF @ 30V | 79W (Tc) | 50A (Tc) | 4.5V, 10V | 8.4 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 60V | 4900pF @ 30V | 79W (Tc) | 50A (Tc) | 4.5V, 10V | 7.9 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 60V | 4900pF @ 30V | 79W (Tc) | 50A (Tc) | 4.5V, 10V | 8.1 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | - |