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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | N-Channel | 40V | 10820pF @ 25V | 294W (Tc) | 195A (Tc) | 6V, 10V | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N CH 40V 195A TO220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | - | Active | TO-220-3 | N-Channel | 40V | 10820pF @ 25V | - | 195A (Tc) | 6V, 10V | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N CH 40V 195A TO220 | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 40V | 10820pF @ 25V | 294W (Tc) | 195A (Tc) | 6V, 10V | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 40V | 10820pF @ 25V | 294W (Tc) | 195A (Tc) | 6V, 10V | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | - |