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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPI70N12S3L-12
Per Unit
$0.1913
RFQ
Infineon Technologies MOSFET N-CH 500V 3.1A PG-TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ CE MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 N-Channel 500V 178pF @ 100V 42W (Tc) 3.1A (Tc) 13V 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V ±20V -
FTC334G
Per Unit
$0.1931
RFQ
Infineon Technologies CONSUMER SOT-223-3 CoolMOS™ CE MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-SOT223 N-Channel 500V 178pF @ 100V 5W (Tc) 4.8A (Tc) 13V 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V ±20V -
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