- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ROHM Semiconductor | MOSFET N-CH 30V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | 8-SOP | N-Channel | 30V | 2600pF @ 10V | - | 13A (Ta) | - | 9.5 mOhm @ 13A, 10V | - | 45nC @ 5V | - | - | |||||
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ROHM Semiconductor | MOSFET N-CH 30V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | 8-SOP | N-Channel | 30V | 2600pF @ 10V | - | 13A (Ta) | - | 9.5 mOhm @ 13A, 10V | - | 45nC @ 5V | - | - | |||||
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | 8-TQFN Exposed Pad | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) | N-Channel | 30V | 2600pF @ 10V | 3.4W (Ta), 54W (Tc) | 21A (Ta), 83A (Tc) | 4.5V, 10V | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | ±20V | - |