- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Alpha Omega Semiconductor Inc. | MOSFET N-CHANNEL 30V 83A 8DFN | 8-VFDFN Exposed Pad | AlphaSGT™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-DFN (2x2) | N-Channel | 100V | 840pF @ 50V | 4.1W (Ta) | 8A (Ta) | 4.5V, 10V | 32 mOhm @ 8A, 10V | 2.4V @ 250µA | 25nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V D2PAK-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™-5 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | N-Channel | 100V | 840pF @ 50V | 313W (Tc) | 120A (Tc) | 10V | 2 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | - |