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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 950V 9A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ P7 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 950V | 712pF @ 400V | 73W (Tc) | 9A (Tc) | 10V | 750 mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 950V 9A TO252 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 950V | 712pF @ 400V | 28W (Tc) | 9A (Tc) | 10V | 750 mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 950V 9A TO251 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 950V | 712pF @ 400V | 73W (Tc) | 9A (Tc) | 10V | 750 mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | - |