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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB04CN10NG
Per Unit
$1.3785
RFQ
Infineon Technologies MOSFET N-CH 200V 35A 8TDSON 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8 N-Channel 200V 2410pF @ 100V 150W (Tc) 35A (Tc) 10V 35 mOhm @ 35A, 10V 4V @ 90µA 30nC @ 10V ±20V -
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