- Series :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | N-Channel | 55V | 5660pF @ 25V | 300W (Tc) | 100A (Tc) | 4.5V, 10V | 4.4 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 55V | 5660pF @ 25V | 300W (Tc) | 100A (Tc) | 4.5V, 10V | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 375A DIRECTFET | DirectFET™ Isometric L8 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET L8 | N-Channel | 100V | 5660pF @ 25V | 3.3W (Ta), 100W (Tc) | 19A (Ta), 114A (Tc) | 10V | 4.4 mOhm @ 68A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | - |