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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
K75T60
Per Unit
$1.1007
RFQ
Infineon Technologies MOSFET N-CH 40V 100A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK N-Channel 40V 5171pF @ 25V 163W (Tc) 100A (Tc) 10V 1.98 mOhm @ 90A, 10V 3.9V @ 100µA 155nC @ 10V ±20V -
K50T60.IKW50N60T
Per Unit
$1.1007
RFQ
Infineon Technologies MOSFET N-CH 40V 100A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-Pak N-Channel 40V 5171pF @ 25V 163W (Tc) 100A (Tc) 10V 1.98 mOhm @ 90A, 10V 3.9V @ 100µA 155nC @ 10V ±20V -
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