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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
SGC10MH
Per Unit
$0.5481
RFQ
Diodes Incorporated MOSFET P-CH 30V 60A POWERDI5060 8-PowerTDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI5060-8 P-Channel 30V 6234pF @ 15V 2.18W (Ta) 36A (Ta) 4.5V, 10V 7.5 mOhm @ 10A, 10V 2.1V @ 250µA 126.2nC @ 10V ±20V
R6628-12
Per Unit
$0.3770
RFQ
Diodes Incorporated MOSFET P-CH 60V 6.6A 8-SO TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252-3 P-Channel 30V 6234pF @ 15V 1.7W (Ta) 17A (Ta) 4.5V, 10V 8 mOhm @ 10A, 10V 2.1V @ 250µA 59.2nC @ 4.5V ±20V
PT7C4307AWEX
Per Unit
$0.5220
RFQ
Diodes Incorporated MOSFET BVDSS: 31V 40V POWERDI506 8-PowerTDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI5060-8 P-Channel 30V 6234pF @ 15V 2.18W (Ta) 14.5A (Ta) 4.5V, 10V 7.5 mOhm @ 10A, 10V 2.1V @ 250µA 126.2nC @ 10V ±20V
PT2208C
Per Unit
$0.4508
RFQ
Diodes Incorporated MOSFET P-CH 250V 0.205A SOT-89 TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252 P-Channel 30V 6234pF @ 15V 1.7W (Ta) 17A (Ta) 4.5V, 10V 8 mOhm @ 10A, 10V 2.1V @ 250µA 59.2nC @ 4.5V ±20V
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