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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 60V 2.3A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 60V | 190pF @ 30V | 1.09W (Ta), 1.66W (Tc) | 2.3A (Tc) | 4.5V, 10V | 156 mOhm @ 1.9A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 20V MICROFOOT | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 60V | 190pF @ 30V | 1.09W (Ta), 1.66W (Tc) | 2.3A (Tc) | 4.5V, 10V | 156 mOhm @ 1.9A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±20V | - |