- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CHAN 600V PPAK SO-8L | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 80V | 5150pF @ 40V | 6.25W (Ta), 125W (Tc) | 32.8A (Ta), 100A (Tc) | 7.5V, 10V | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 105nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 80V | 5150pF @ 40V | 104W (Tc) | 100A (Tc) | 7.5V, 10V | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 81nC @ 7.5V | ±20V | - |