- Rds On (Max) @ Id, Vgs :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 10-PolarPAK® (L) | N-Channel | 60V | 3100pF @ 30V | 5.2W (Ta), 125W (Tc) | 60A (Tc) | 10V | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 60A POLARPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 10-PolarPAK® (L) | N-Channel | 60V | 3100pF @ 30V | 5.2W (Ta), 125W (Tc) | 60A (Tc) | 10V | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 500V 2.1A TO220FP | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 10-PolarPAK® (L) | N-Channel | 60V | 3100pF @ 30V | 5.2W (Ta), 125W (Tc) | 60A (Tc) | 10V | 6.1 mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | ±20V | - |