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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NCP6132BMNR2G QFN60
RFQ
ON Semiconductor MOSFET P-CH 60V 23A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK P-Channel 60V 1620pF @ 25V 3W (Ta), 90W (Tc) 23A (Ta) 10V 120 mOhm @ 11.5A, 10V 4V @ 250µA 50nC @ 10V ±15V -
MTB23P06VT4
RFQ
ON Semiconductor MOSFET P-CH 60V 23A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK P-Channel 60V 1620pF @ 25V 3W (Ta), 90W (Tc) 23A (Ta) 10V 120 mOhm @ 11.5A, 10V 4V @ 250µA 50nC @ 10V ±15V -
STL18N55M5
RFQ
STMicroelectronics MOSFET N-CH 550V 2.4A POWERFLAT 8-PowerVDFN MDmesh™ V MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete PowerFlat™ (8x8) HV N-Channel 550V 1352pF @ 100V 3W (Ta), 90W (Tc) 2.4A (Ta), 13A (Tc) 10V 270 mOhm @ 6A, 10V 5V @ 250µA 31nC @ 10V ±25V -
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