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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPD50N06S3L-13
Per Unit
$14.2600
RFQ
Infineon Technologies MOSFET N-CH 600V 77.5A TO247-3 TO-247-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 N-Channel 600V 8180pF @ 100V 481W (Tc) 77.5A (Tc) 10V 41 mOhm @ 35.5A, 10V 4.5V @ 2.96mA 170nC @ 10V ±20V -
IPB100N10S3-5
Per Unit
$15.8900
RFQ
Infineon Technologies MOSFET N-CH 600V 77.5A TO 247-3 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 N-Channel 600V 6530pF @ 10V 481W (Tc) 77.5A (Tc) 10V 41 mOhm @ 44.4A, 10V 3.5V @ 2.96mA 290nC @ 10V ±20V -
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