- Series :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 600V 16A TO-220FP | TO-220-3 Full Pack | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 600V | 2850pF @ 400V | 34W (Tc) | 16A (Tc) | 10V | 60 mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 560V 16A TO220FP | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO220-3 | N-Channel | 560V | 1600pF @ 25V | 34W (Tc) | 16A (Tc) | 10V | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-FP | N-Channel | 650V | 1520pF @ 100V | 34W (Tc) | 16A (Tc) | 10V | 199 mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43nC @ 10V | ±20V | - |