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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
MC74HC4851ADR2
Per Unit
$10.5000
RFQ
ON Semiconductor MOSFET N-CH 500V 44A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247 N-Channel 500V 5335pF @ 25V 750W (Tc) 44A (Tc) 10V 120 mOhm @ 22A, 10V 4V @ 250µA 108nC @ 10V ±30V
IXTH130N15T
Per Unit
$5.2967
RFQ
IXYS MOSFET N-CH 150V 130A TO-247 TO-247-3 TrenchHV™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247 (IXTH) N-Channel 150V 9800pF @ 25V 750W (Tc) 130A (Tc) 10V 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V ±30V
IXTQ102N20T
Per Unit
$5.1233
RFQ
IXYS MOSFET N-CH 200V 102A TO3P TO-3P-3, SC-65-3 TrenchHV™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-3P N-Channel 200V 6800pF @ 25V 750W (Tc) 102A (Tc) - 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V -
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