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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
P6SMB300A TRTB
RFQ
ON Semiconductor MOSFET N-CH 30V 18A POWER56 8-PowerTDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) N-Channel 30V 2600pF @ 15V 2.5W (Ta), 70W (Tc) 18A (Ta), 28A (Tc) 4.5V, 10V 5 mOhm @ 18A, 10V 3V @ 1mA 40nC @ 10V ±20V -
FDMS8672AS
RFQ
ON Semiconductor MOSFET N-CH 30V 18A POWER56 8-PowerTDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) N-Channel 30V 2600pF @ 15V 2.5W (Ta), 70W (Tc) 18A (Ta), 28A (Tc) 4.5V, 10V 5 mOhm @ 18A, 10V 3V @ 1mA 40nC @ 10V ±20V -
STL8N65M5
RFQ
STMicroelectronics MOSFET N-CH 650V 7A POWERFLAT 14-PowerVQFN MDmesh™ V MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete PowerFLAT™ (5x5) N-Channel 650V 690pF @ 100V 2.5W (Ta), 70W (Tc) 1.4A (Ta), 7A (Tc) 10V 600 mOhm @ 3.5A, 10V 5V @ 250µA 15nC @ 10V ±25V -
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