- Manufacture :
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- Mounting Type :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 44A DPAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 49A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | P-Channel | 55V | 1200pF @ 25V | 3.8W (Ta), 110W (Tc) | 31A (Tc) | 10V | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 47A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | |||||
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Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 55V 31A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | P-Channel | 55V | 1200pF @ 25V | 3.8W (Ta), 110W (Tc) | 31A (Tc) | 10V | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 55V 31A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | P-Channel | 55V | 1200pF @ 25V | 3.8W (Ta), 110W (Tc) | 31A (Tc) | 10V | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 47A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | ||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 38A 200A 5DFN | 8-PowerTDFN, 5 Leads | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 38A 200A 5DFN | 8-PowerTDFN, 5 Leads | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 38A 200A 5DFN | 8-PowerTDFN, 5 Leads | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 38A 200A 5DFN | 8-PowerTDFN, 5 Leads | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 40V 200A SO8FL | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 40V | 4300pF @ 20V | 3.8W (Ta), 110W (Tc) | - | 4.5V, 10V | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | P-Channel | 55V | 1200pF @ 25V | 3.8W (Ta), 110W (Tc) | 31A (Tc) | 10V | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1700pF @ 25V | 3.8W (Ta), 110W (Tc) | 47A (Tc) | 4V, 10V | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | - | |||||
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Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | P-Channel | 150V | 860pF @ 25V | 3.8W (Ta), 110W (Tc) | 13A (Tc) | 10V | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | - |