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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NE532N
RFQ
ON Semiconductor MOSFET N-CH 100V 1.5A SOT-223 TO-261-4, TO-261AA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223-4 N-Channel 100V 235pF @ 25V 2.2W (Tc) 1.5A (Tc) 5V 440 mOhm @ 750mA, 5V 2V @ 250µA 8nC @ 5V ±20V
MC40P5001DP
Per Unit
$0.2522
RFQ
ON Semiconductor MOSFET N-CH 200V 0.85A SOT-223 TO-261-4, TO-261AA QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223-4 N-Channel 200V 310pF @ 25V 2.2W (Tc) 850mA (Tc) 5V, 10V 1.35 Ohm @ 425mA, 10V 2V @ 250µA 5.2nC @ 5V ±20V
IRLM110ATF
RFQ
ON Semiconductor MOSFET N-CH 100V 1.5A SOT-223 TO-261-4, TO-261AA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223-4 N-Channel 100V 235pF @ 25V 2.2W (Tc) 1.5A (Tc) 5V 440 mOhm @ 750mA, 5V 2V @ 250µA 8nC @ 5V ±20V
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