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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SI4491EDY-T1-E3
RFQ
Vishay Siliconix MOSFET N-CH 75V 90A TO220AB TO-220-3 TrenchFET® MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB N-Channel 75V 4250pF @ 30V 3.75W (Ta), 208.3W (Tc) 90A (Tc) 10V 7.7 mOhm @ 20A, 10V 4.5V @ 250µA 105nC @ 10V ±20V -
RQA160N03
RFQ
Vishay Siliconix MOSFET P-CH 40V 60A DPAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete TO-263 (D2Pak) N-Channel 75V 4250pF @ 30V 3.75W (Ta), 208.3W (Tc) 110A (Tc) 10V 7 mOhm @ 20A, 10V 4.5V @ 250µA 105nC @ 10V ±20V -
SUP90N08-7M7P-E3
RFQ
Vishay Siliconix MOSFET N-CH 75V 90A TO220AB TO-220-3 TrenchFET® MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB N-Channel 75V 4250pF @ 30V 3.75W (Ta), 208.3W (Tc) 90A (Tc) 10V 7.7 mOhm @ 20A, 10V 4.5V @ 250µA 105nC @ 10V ±20V -
SUM110N08-07P-E3
RFQ
Vishay Siliconix MOSFET N-CH 75V 110A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete TO-263 (D2Pak) N-Channel 75V 4250pF @ 30V 3.75W (Ta), 208.3W (Tc) 110A (Tc) 10V 7 mOhm @ 20A, 10V 4.5V @ 250µA 105nC @ 10V ±20V -
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