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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET P-CH 20V 15A 2X2 PQFN | 6-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | P-Channel | 20V | 877pF @ 10V | 2.1W (Ta), 9.6W (Tc) | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 31 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | ±12V | - | |||||
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Infineon Technologies | MOSFET P-CH 20V 5.8A 2X2 PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | P-Channel | 20V | 877pF @ 10V | 2.1W (Ta), 9.6W (Tc) | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 31 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | ±12V | - |