- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET N-CH 250V 15.6A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 250V | 1080pF @ 25V | 3.13W (Ta), 139W (Tc) | 15.6A (Tc) | 10V | 270 mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 250V 15.6A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 250V | 1080pF @ 25V | 3.13W (Ta), 139W (Tc) | 15.6A (Tc) | 10V | 270 mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 19A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 200V | 1080pF @ 25V | 3.13W (Ta), 139W (Tc) | 19A (Tc) | 10V | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 200V 19A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 200V | 1080pF @ 25V | 3.13W (Ta), 139W (Tc) | 19A (Tc) | 10V | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | - |