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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
Le88221DLC-VCG
RFQ
Microsemi Corporation MOSFET N-CH 1000V 40A SP1 POWER MOS 8™ Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1000V 14800pF @ 25V 657W (Tc) 40A (Tc) 10V 216 mOhm @ 33A, 10V 5V @ 2.5mA 570nC @ 10V ±30V
LE58QL021BTC
RFQ
Microsemi Corporation MOSFET N-CH 1000V 40A SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1000V 14800pF @ 25V 657W (Tc) 40A (Tc) 10V 216 mOhm @ 33A, 10V 5V @ 2.5mA 570nC @ 10V ±30V
IH6108CJE
Per Unit
$55.3976
RFQ
Microsemi Corporation MOSFET N-CH 1200V 31A SP1 POWER MOS 8™ Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Active SP1 N-Channel 1200V 14560pF @ 25V 657W (Tc) 31A (Tc) 10V 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V ±30V
IA4220
Per Unit
$39.9024
RFQ
Microsemi Corporation MOSFET N-CH 1200V 31A SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Active SP1 N-Channel 1200V 14560pF @ 25V 657W (Tc) 31A (Tc) 10V 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V ±30V
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