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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
LE792221VC
RFQ
Microsemi Corporation MOSFET N-CH 1200V 103A SP6 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP6 N-Channel 1200V 30900pF @ 25V 2272W (Tc) 103A (Tc) 10V 114 mOhm @ 51.5A, 10V 5V @ 15mA 1122nC @ 10V ±30V
JANTX1N3019B
Per Unit
$201.4194
RFQ
Microsemi Corporation MOSFET N-CH 1000V 129A SP6 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Active SP6 N-Channel 1000V 31100pF @ 25V 2272W (Tc) 129A (Tc) 10V 70 mOhm @ 64.5A, 10V 5V @ 15mA 1116nC @ 10V ±30V
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