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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | 8-TQFN Exposed Pad | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) | N-Channel | 30V | 4960pF @ 10V | 3.6W (Ta), 96W (Tc) | 32A (Ta), 169A (Tc) | 4.5V, 10V | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | ±20V | - |