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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB052N04NG
Per Unit
$1.5004
RFQ
Infineon Technologies DIFFERENTIATED MOSFETS 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8 FL N-Channel 60V 6500pF @ 30V 3W (Ta), 167W (Tc) 31A (Ta), 100A (Tc) 6V, 10V 1.6 mOhm @ 50A, 10V 3.3V @ 95µA 95nC @ 10V ±20V -
FP5510E2
Per Unit
$1.3459
RFQ
Infineon Technologies DIFFERENTIATED MOSFETS 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8 FL N-Channel 40V 9520pF @ 20V 3W (Ta), 167W (Tc) 39A (Ta), 100A (Tc) 4.5V, 10V 1 mOhm @ 50A, 10V 2V @ 250µA 133nC @ 10V ±20V -
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