- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 40V 21A 8TSDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8-FL | N-Channel | 40V | 2300pF @ 20V | 2.1W (Ta), 63W (Tc) | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8 mOhm @ 20A, 10V | - | 32nC @ 10V | ±20V | - | ||||||
|
Infineon Technologies | MOSFET N-CH 100V 40A 8TSDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | N-Channel | 100V | 2500pF @ 50V | 2.1W (Ta), 63W (Tc) | 40A (Tc) | 4.5V, 10V | 15 mOhm @ 20A, 10V | 2.1V @ 33µA | 35nC @ 10V | ±20V | - | ||||||
|
Infineon Technologies | MOSFET N-CH 100V 40A TSDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | N-Channel | 100V | 1700pF @ 50V | 2.1W (Ta), 63W (Tc) | 8A (Ta), 40A (Tc) | 6V, 10V | 16 mOhm @ 20A, 10V | 3.5V @ 12µA | 25nC @ 10V | ±20V | - |