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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IRFS4410TRPBF
Per Unit
$0.4774
RFQ
Vishay Siliconix MOSFET N-CH 25V 35A PPAK 1212-8 SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP N-Channel 40V 640pF @ 20V 2W (Ta), 3.5W (Tc) 7.4A (Tc) 4.5V, 10V 35.5 mOhm @ 5A, 10V 3V @ 250µA 20nC @ 10V ±20V -
ELM89103BC-S
Per Unit
$0.4782
RFQ
Vishay Siliconix MOSFET N-CH 200V 14.1A 1212-8 SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP N-Channel 40V 640pF @ 20V 2W (Ta), 3.5W (Tc) 7.4A (Tc) 4.5V, 10V 35.5 mOhm @ 5A, 10V 3V @ 250µA 20nC @ 10V ±20V -
AUIRF9952QTRPBF
Per Unit
$0.3669
RFQ
Vishay Siliconix MOSFET N-CH 30V 6.5A PPAK 1212-8 SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP N-Channel 20V 860pF @ 10V 2W (Ta), 3.5W (Tc) 8A (Tc) 1.8V, 4.5V 27 mOhm @ 5.1A, 4.5V 1V @ 250µA 24nC @ 8V ±8V -
ACE510HDGM+
Per Unit
$0.3669
RFQ
Vishay Siliconix MOSFET P-CH 30V 19.7A 8-SOIC SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP N-Channel 20V 860pF @ 10V 2W (Ta), 3.5W (Tc) 8A (Tc) 1.8V, 4.5V 27 mOhm @ 5.1A, 4.5V 1V @ 250µA 24nC @ 8V ±8V -
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