- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 44.5A POLARPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 10-PolarPAK® (U) | N-Channel | 30V | 2150pF @ 15V | 5.2W (Ta), 25W (Tc) | 44.5A (Tc) | 4.5V, 10V | 7 mOhm @ 12.1A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 10-PolarPAK® (U) | N-Channel | 30V | 2150pF @ 15V | 5.2W (Ta), 25W (Tc) | 44.5A (Tc) | 4.5V, 10V | 7 mOhm @ 12.1A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 600V 2A DPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 10-PolarPAK® (U) | N-Channel | 30V | 1510pF @ 15V | 5.2W (Ta), 25W (Tc) | 45A (Tc) | 4.5V, 10V | 5.6 mOhm @ 20A, 10V | 2V @ 250µA | 38nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 400V 6A TO-220AB | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Last Time Buy | 10-PolarPAK® (L) | N-Channel | 25V | 1400pF @ 12.5V | 5.2W (Ta), 25W (Tc) | 45A (Tc) | 4.5V, 10V | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 36nC @ 10V | ±20V | - |