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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Vgs (Max)
SIS8205AHC
RFQ
Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 TO-205AD, TO-39-3 Metal Can - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-39 P-Channel 100V 150pF @ 25V 6.25W (Ta) 790mA (Ta) 10V 5 Ohm @ 1A, 10V 4.5V @ 1mA ±20V
SiS782DN-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 TO-205AD, TO-39-3 Metal Can - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-39 P-Channel 80V 150pF @ 25V 6.25W (Ta) 880mA (Ta) 10V 5 Ohm @ 1A, 10V 4.5V @ 1mA ±20V
SiS612EDNT-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 TO-205AD, TO-39-3 Metal Can - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-39 P-Channel 80V 150pF @ 25V 6.25W (Ta) 880mA (Ta) 10V 5 Ohm @ 1A, 10V 4.5V @ 1mA ±20V
SiS452DN-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 30V 0.32A TO-205 TO-205AD, TO-39-3 Metal Can - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-39 P-Channel 80V 150pF @ 25V 6.25W (Ta) 880mA (Ta) 10V 5 Ohm @ 1A, 10V 4.5V @ 1mA ±20V
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