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Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STU607S
RFQ
Diodes Incorporated MOSFET N-CH 20V 6.5A 8-SOP SOT-23-6 Thin, TSOT-23-6 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete TSOT-26 P-Channel 20V 1496pF @ 15V 1.2W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 14.4nC @ 4.5V ±8V -
PT5188E89E-33
Per Unit
$0.1810
RFQ
Diodes Incorporated MOSFET N CH 30V 10A 8SOP SOT-23-6 Thin, TSOT-23-6 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TSOT-26 P-Channel 20V 1496pF @ 15V 1.2W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 14.4nC @ 4.5V ±8V -
NPC1002A2EV
RFQ
ON Semiconductor MOSFET P-CH 20V 4.5A BGA 9-WFBGA PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 9-BGA (2x2.1) P-Channel 20V 884pF @ 10V 1.8W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V ±12V -
FDZ204P
RFQ
ON Semiconductor MOSFET P-CH 20V 4.5A BGA 9-WFBGA PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 9-BGA (2x2.1) P-Channel 20V 884pF @ 10V 1.8W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V ±12V -
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