- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK 1212-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 12A PPAK SO-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V | - | |||||
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Diodes Incorporated | MOSFET N-CH 60V 0.45A TO92-3 | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | N-Channel | 20V | 2555pF @ 10V | 2W (Ta) | 12A (Ta) | 2.5V, 10V | 8 mOhm @ 12A, 10V | 1.2V @ 250µA | 58.3nC @ 10V | ±12V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 14A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 14A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2480pF @ 10V | 2.5W (Ta) | 12A (Ta) | 2.8V, 10V | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2480pF @ 10V | 2.5W (Ta) | 12A (Ta) | 2.8V, 10V | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - | ||||
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Infineon Technologies | MOSFET P-CH 20V 12A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-DSO-8 | P-Channel | 20V | 9600pF @ 15V | 1.6W (Ta) | 12A (Ta) | 2.5V, 4.5V | 8 mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88nC @ 4.5V | ±12V | - | |||||
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DFN2020-6J | N-Channel | 20V | 1800pF @ 4V | - | 12A (Ta) | 1.2V, 4.5V | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | ±10V | - | |||||
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DFN2020-6J | N-Channel | 20V | 1800pF @ 4V | - | 12A (Ta) | 1.2V, 4.5V | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | ±10V | - | |||||
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DFN2020-6J | N-Channel | 20V | 1800pF @ 4V | - | 12A (Ta) | 1.2V, 4.5V | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | ±10V | - | |||||
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DFN2020-6J | N-Channel | 20V | 1800pF @ 4V | - | 12A (Ta) | 1.2V, 4.5V | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | ±10V | - | |||||
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DFN2020-6J | N-Channel | 20V | 1800pF @ 4V | - | 12A (Ta) | 1.2V, 4.5V | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | ±10V | - | |||||
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ON Semiconductor | MOSFET P-CHANNEL 20V 12A 6PQFN | 6-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | P-Channel | 20V | 4383pF @ 10V | 2.4W (Ta) | 12A (Ta) | 1.5V, 4.5V | 13 mOhm @ 2.5A, 4.5V | 1.4V @ 250µA | 39nC @ 4.5V | ±8V | - | |||||
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK 1212-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2480pF @ 10V | 2.5W (Ta) | 12A (Ta) | 2.8V, 10V | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2480pF @ 10V | 2.5W (Ta) | 12A (Ta) | 2.8V, 10V | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2050pF @ 10V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 20V | 2480pF @ 10V | 2.5W (Ta) | 12A (Ta) | 2.8V, 10V | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - |