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Packaging :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE7758GK12
RFQ
Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
TLE7233GS
RFQ
Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
RXG15BD
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
PX3684EDSG-R2-IB416-A
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
IRF7460PBF
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
IRF7460TRPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
IRF7460TR
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
IRF7460
RFQ
Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 2050pF @ 10V 2.5W (Ta) 12A (Ta) 4.5V, 10V 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V ±20V -
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