- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK 1212-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V | |||||
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Vishay Siliconix | MOSFET N-CH 30V 12A PPAK SO-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V | |||||
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ON Semiconductor | MOSFET P-CH 12V 12A 6QFN | 6-WDFN Exposed Pad | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-MicroFET (2x2) | P-Channel | 12V | 3957pF @ 6V | 2.4W (Ta) | 12A (Ta) | 1.8V, 4.5V | 12.5 mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | ±8V | |||||
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK 1212-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® 1212-8 | P-Channel | 20V | - | 1.9W (Ta) | 12A (Ta) | 1.8V, 4.5V | 7.7 mOhm @ 19A, 4.5V | 1V @ 250µA | 140nC @ 5V | ±8V |