- Manufacture :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Diodes Incorporated | MOSFET N-CH 60V 0.45A TO92-3 | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | N-Channel | 20V | 2555pF @ 10V | 2W (Ta) | 12A (Ta) | 2.5V, 10V | 8 mOhm @ 12A, 10V | 1.2V @ 250µA | 58.3nC @ 10V | ±12V | - | |||||
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Infineon Technologies | MOSFET P-CH 20V 12A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-DSO-8 | P-Channel | 20V | 9600pF @ 15V | 1.6W (Ta) | 12A (Ta) | 2.5V, 4.5V | 8 mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88nC @ 4.5V | ±12V | - |