- Mounting Type :
- Operating Temperature :
- Part Status :
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- Input Capacitance (Ciss) (Max) @ Vds :
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- Drive Voltage (Max Rds On, Min Rds On) :
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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 84A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 30V | 2200pF @ 25V | 7.5W (Ta), 65.2W (Tc) | 63A (Tc) | 4.5V, 10V | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 600V 60A TO247AC | TO-247-3 | E | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 600V | 4369pF @ 100V | 357W (Tc) | 63A (Tc) | 10V | - | 5V @ 250µA | 126nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 30V 90A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 30V | 2200pF @ 25V | 7.5W (Ta), 65.2W (Tc) | 63A (Tc) | 4.5V, 10V | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 60V 9.2A TO220AB | TO-220-3 | ThunderFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 250V | - | 375W (Tc) | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | TO-247-3 | CoolMOS™ CFD7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 650V | 5623pF @ 400V | 278W (Tc) | 63A (Tc) | 10V | 31 mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 63A 8TDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 100V | 2500pF @ 50V | 78W (Tc) | 63A (Tc) | 6V, 10V | 10.9 mOhm @ 46A, 10V | 3.5V @ 45µA | 35nC @ 10V | ±20V | - | |||||
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Microsemi Corporation | MOSFET N-CH 550V 63A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Obsolete | ISOTOP® | N-Channel | 550V | 9165pF @ 25V | 595W (Tc) | 63A (Tc) | 10V | 65 mOhm @ 31.5A, 10V | 5V @ 5mA | 205nC @ 10V | ±30V | - | ||||
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4,128
In-stock
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ON Semiconductor | MOSFET N-CH 60V 63A TO-220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 60V | 1680pF @ 25V | 107W (Tc) | 63A (Tc) | 10V | 12.4 mOhm @ 20A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | - | |||
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STMicroelectronics | MOSFET N-CH 650V 63A TO247-3 | TO-247-3 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 650V | 5140pF @ 100V | 446W (Tc) | 63A (Tc) | 10V | 46 mOhm @ 31.5A, 10V | 4V @ 250µA | 117nC @ 10V | ±25V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 63A 8TDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 100V | 2500pF @ 50V | 78W (Tc) | 63A (Tc) | 6V, 10V | 10.9 mOhm @ 46A, 10V | 3.5V @ 45µA | 35nC @ 10V | ±20V | - |