- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 30V | 980pF @ 25V | 31W (Tc) | 30A (Tc) | 4.5V, 10V | 13.6 mOhm @ 30A, 10V | 2.2V @ 10µA | 14nC @ 10V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-11 | N-Channel | 60V | 1560pF @ 25V | 36W (Tc) | 30A (Tc) | 4.5V, 10V | 23 mOhm @ 30A, 10V | 2.2V @ 10µA | 21nC @ 10V | ±16V | - |