- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 40V 20A PPAK SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Last Time Buy | PowerPAK® 1212-8 | N-Channel | 25V | 1600pF @ 12.5V | 3.8W (Ta), 52W (Tc) | 35A (Tc) | 4.5V, 10V | 5.1 mOhm @ 20A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CHANNEL 30V 31.3A 8SO | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Last Time Buy | PowerPAK® 1212-8 | N-Channel | 30V | 1800pF @ 15V | 3.8W (Ta), 52W (Tc) | 35A (Tc) | 4.5V, 10V | 5.1 mOhm @ 20A, 10V | 2.2V @ 250µA | 55nC @ 10V | ±20V | - |