- Mounting Type :
- Supplier Device Package :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 55A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 13A 8-SOIC | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 870pF @ 25V | 68W (Tc) | 35A (Tc) | 4.5V, 10V | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | - |