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Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PBLS4001Y
RFQ
ON Semiconductor MOSFET N-CH 25V 35A IPAK TO-251-3 Short Leads, IPak, TO-251AA PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 25V 2610pF @ 13V 88W (Tc) 35A (Tc) 4.5V, 10V 5.7 mOhm @ 35A, 10V 2.5V @ 250µA 52nC @ 10V ±20V -
PBLS4001D
RFQ
ON Semiconductor MOSFET N-CH 25V 35A IPAK TO-251-3 Short Leads, IPak, TO-251AA PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 25V 3720pF @ 13V 115W (Tc) 35A (Tc) 4.5V, 10V 4 mOhm @ 35A, 10V 2.5V @ 250µA 73nC @ 10V ±20V -
OB2512RNJPA
RFQ
ON Semiconductor MOSFET N-CH 25V 35A I-PAK TO-251-3 Short Leads, IPak, TO-251AA PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 25V 2610pF @ 13V 88W (Tc) 35A (Tc) 4.5V, 10V 5.7 mOhm @ 35A, 10V 2.5V @ 250µA 52nC @ 10V ±20V -
OB2512
RFQ
ON Semiconductor MOSFET N-CH 25V 35A I-PAK TO-251-3 Short Leads, IPak, TO-251AA PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 25V 3720pF @ 13V 115W (Tc) 35A (Tc) 4.5V, 10V 4 mOhm @ 35A, 10V 2.5V @ 250µA 73nC @ 10V ±20V -
FDU8796
RFQ
ON Semiconductor MOSFET N-CH 25V 35A I-PAK TO-251-3 Short Leads, IPak, TO-251AA PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 25V 2610pF @ 13V 88W (Tc) 35A (Tc) 4.5V, 10V 5.7 mOhm @ 35A, 10V 2.5V @ 250µA 52nC @ 10V ±20V -
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