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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STF16NK60Z
RFQ
STMicroelectronics MOSFET N-CH 600V 14A TO-220FP TO-220-3 Full Pack SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP N-Channel 600V 2650pF @ 25V 40W (Tc) 14A (Tc) 10V 420 mOhm @ 7A, 10V 4.5V @ 50µA 86nC @ 10V ±30V -
STP16NK60Z
RFQ
STMicroelectronics MOSFET N-CH 600V 14A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220AB N-Channel 600V 2650pF @ 25V 190W (Tc) 14A (Tc) 10V 420 mOhm @ 7A, 10V 4.5V @ 50µA 86nC @ 10V ±30V -
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