8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Discontinued at Digi-Key | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | TO-261-4, TO-261AA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 55V | 400pF @ 25V | 1W (Ta) | 2.8A (Ta) | 10V | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | - |