- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 55V 85A TO-262 | TO-220-3 | FETKY™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | N-Channel | 30V | 2300pF @ 25V | 2W (Ta), 70W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 32A, 10V | 1V @ 250µA | 44nC @ 4.5V | ±16V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 20V 60A DPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 20V 36A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 36A TO-262 | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 20V 54A TO-220AB | TO-220-3 | HEXFET® | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-220AB | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 54A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 54A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 20V 54A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 30V 54A TO-220AB | TO-220-3 | FETKY™ | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-220AB | N-Channel | 30V | 2300pF @ 25V | 2W (Ta), 70W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 32A, 10V | 1V @ 250µA | 44nC @ 4.5V | ±16V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 650V 54A TO247 | TO-247-3 | FRFET®, SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 Long Leads | N-Channel | 650V | 7109pF @ 100V | 481W (Tc) | 54A (Tc) | 10V | 77 mOhm @ 27A, 10V | 5V @ 5.4mA | 164nC @ 10V | ±20V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 650V 54A TO247 | TO-247-3 | Automotive, AEC-Q101, SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 650V | 7162pF @ 25V | 481W (Tc) | 54A (Tc) | 10V | 77 mOhm @ 27A, 10V | 5V @ 250µA | 164nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 54A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 54A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 20V 54A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 1060pF @ 10V | 3.8W (Ta), 71W (Tc) | 54A (Tc) | 4.5V, 10V | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | - | ||||
|
|
STMicroelectronics | MOSFET N-CH 500V 54A TO-247 | TO-247-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 500V | 5800pF @ 50V | 350W (Tc) | 54A (Tc) | 10V | 54 mOhm @ 27A, 10V | 4V @ 250µA | 180nC @ 10V | ±25V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 650V 54A TO247 | TO-247-3 | Automotive, AEC-Q101, SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 650V | 7162pF @ 25V | 481W (Tc) | 54A (Tc) | 10V | 77 mOhm @ 27A, 10V | 5V @ 250µA | 164nC @ 10V | ±20V | - |