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- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 200V 5.2A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 200V 5.2A TO-262 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 250V 2.7A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I2PAK | N-Channel | 200V | 260pF @ 25V | - | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET P-CH 60V 8.5A TO220FP | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220-3 | P-Channel | 100V | 390pF @ 25V | 37W (Tc) | 5.2A (Tc) | 10V | 600 mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 250V 2.7A TO-220AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 150V 53.7A SO-8 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | P-Channel | 100V | 390pF @ 25V | 37W (Tc) | 5.2A (Tc) | 10V | 600 mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 100V 4.5A TO220FP | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 200V 20A TO-247AC | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 200V | 260pF @ 25V | 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 60V 60A PPAK SO-8 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 650V | 225pF @ 100V | 30W (Tc) | 5.2A (Tc) | 10V | 1.5 Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | ±20V | Super Junction | ||||
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Infineon Technologies | MOSFET N-CH 700V 5.2A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 700V | 225pF @ 100V | 53W (Tc) | 5.2A (Tc) | 10V | 1.5 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | - | |||||
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Infineon Technologies | CONSUMER | SOT-223-3 | CoolMOS™ CE | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 650V | 225pF @ 100V | 5W (Tc) | 5.2A (Tc) | 10V | 1.5 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 100V 5.2A TO220FP | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220-3 | P-Channel | 100V | 390pF @ 25V | 37W (Tc) | 5.2A (Tc) | 10V | 600 mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 200V 5.2A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 200V | 260pF @ 25V | 3W (Ta), 50W (Tc) | 5.2A (Tc) | 10V | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | - |