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- Operating Temperature :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 12V 8.2A 8-TSSOP | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 100V | 1970pF @ 50V | 3W (Ta), 6W (Tc) | 18.4A (Tc) | 4.5V, 10V | 8.8 mOhm @ 15A, 10V | 2.8V @ 250µA | 67nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 200V 5.2A D2PAK | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 250V | 2214pF @ 125V | 5.4W (Ta), 96W (Tc) | 18.4A (Tc) | 6V, 10V | 118 mOhm @ 4.4A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | |||||
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STMicroelectronics | MOSFET N-CH 500V 18.4A TO-247 | TO-247-3 | PowerMESH™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 500V | 2980pF @ 25V | 220W (Tc) | 18.4A (Tc) | 10V | 270 mOhm @ 9A, 10V | 4V @ 250µA | 128nC @ 10V | ±30V | - |