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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGW30N60HS
RFQ
Infineon Technologies MOSFET P-CH 60V 8.8A TO-220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 P-Channel 60V 420pF @ 25V 42W (Tc) 8.8A (Tc) 10V 300 mOhm @ 6.2A, 10V 4V @ 250µA 15nC @ 10V ±20V -
IDM02G120C5
Per Unit
$1.0800
RFQ
Infineon Technologies MOSFET P-CH 60V 8.8A TO-220 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 P-Channel 60V 420pF @ 25V 42W (Tc) 8.8A (Tc) 10V 300 mOhm @ 6.2A, 10V 4V @ 250µA 15nC @ 10V ±20V -
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