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Packaging :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE4983C-HTNE6815
RFQ
Infineon Technologies MOSFET N-CH 30V 55A I-PAK TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 N-Channel 60V 160pF @ 25V 1W (Ta) 1.6A (Ta) 10V 220 mOhm @ 1.6A, 10V 4V @ 250µA 8nC @ 10V ±20V -
SAB80C537-N-T40/85
RFQ
Infineon Technologies MOSFET N-CH 60V 1.6A SOT223 TO-261-4, TO-261AA HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 N-Channel 60V 160pF @ 25V 1W (Ta) 1.6A (Ta) 10V 220 mOhm @ 1.6A, 10V 4V @ 250µA 8nC @ 10V ±20V -
PX3875DDQG-G004
RFQ
Infineon Technologies MOSFET N-CH 60V 1.6A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 N-Channel 60V 160pF @ 25V 1W (Ta) 1.6A (Ta) 10V 220 mOhm @ 1.6A, 10V 4V @ 250µA 8nC @ 10V ±20V -
IRFL1006PBF
RFQ
Infineon Technologies MOSFET N-CH 60V 1.6A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 N-Channel 60V 160pF @ 25V 1W (Ta) 1.6A (Ta) 10V 220 mOhm @ 1.6A, 10V 4V @ 250µA 8nC @ 10V ±20V -
IRFL1006
RFQ
Infineon Technologies MOSFET N-CH 60V 1.6A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 N-Channel 60V 160pF @ 25V 1W (Ta) 1.6A (Ta) 10V 220 mOhm @ 1.6A, 10V 4V @ 250µA 8nC @ 10V ±20V -
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