- Mounting Type :
- Operating Temperature :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
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23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 3.6A SOT-23 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-236 | P-Channel | 30V | 1295pF @ 15V | 1.25W (Ta), 2.5W (Tc) | 7.6A (Tc) | 4.5V, 10V | 29 mOhm @ 5.4A, 10V | 2.5V @ 250µA | 36nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 560V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 560V | 750pF @ 25V | 83W (Tc) | 7.6A (Tc) | 10V | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 560V 7.6A TO220FP | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO220-FP | N-Channel | 560V | 750pF @ 25V | 32W (Tc) | 7.6A (Tc) | 10V | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 560V 7.6A TO-220AB | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO220-3-1 | N-Channel | 560V | 750pF @ 25V | 83W (Tc) | 7.6A (Tc) | 10V | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 7.6A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | N-Channel | 100V | 330pF @ 25V | 30W (Tc) | 7.6A (Tc) | 10V | 200 mOhm @ 4.3A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | - | ||||
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Infineon Technologies | CONSUMER | SOT-223-3 | CoolMOS™ CE | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 500V | 280pF @ 100V | 5W (Tc) | 7.6A (Tc) | 13V | 800 mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 550V 7.6A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO-252 | N-Channel | 550V | 433pF @ 100V | 57W (Tc) | 7.6A (Tc) | 13V | 500 mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 500V 7.6A PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Discontinued at Digi-Key | PG-TO252-3 | N-Channel | 500V | 433pF @ 100V | 57W (Tc) | 7.6A (Tc) | 13V | 500 mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | Super Junction | |||||
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Infineon Technologies | MOSFET N-CH 500V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3-1 | N-Channel | 500V | 750pF @ 25V | 83W (Tc) | 7.6A (Tc) | 10V | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | I-PAK | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I-PAK | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 200V | 830pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 5V, 10V | 360 mOhm @ 3.8A, 10V | 2V @ 250µA | 17nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I-PAK | N-Channel | 200V | 830pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 5V, 10V | 360 mOhm @ 3.8A, 10V | 2V @ 250µA | 17nC @ 5V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 25V 7.6A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 25V | 1330pF @ 20V | 1.04W (Ta), 62.5W (Tc) | 7.6A (Tc) | 4.5V, 10V | 8.2 mOhm @ 30A, 10V | 2V @ 250µA | 9.5nC @ 4.5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252, (D-Pak) | N-Channel | 200V | 830pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 5V, 10V | 360 mOhm @ 3.8A, 10V | 2V @ 250µA | 17nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | UniFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | N-Channel | 200V | 585pF @ 25V | 83W (Tc) | 7.6A (Tc) | 5V, 10V | 360 mOhm @ 3.8A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 200V | 670pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 10V | 360 mOhm @ 3.8A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 200V | 830pF @ 25V | 2.5W (Ta), 51W (Tc) | 7.6A (Tc) | 5V, 10V | 360 mOhm @ 3.8A, 10V | 2V @ 250µA | 17nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 25V 7.6A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 25V | 1330pF @ 20V | 1.04W (Ta), 62.5W (Tc) | 7.6A (Tc) | 4.5V, 10V | 8.2 mOhm @ 30A, 10V | 2V @ 250µA | 9.5nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 7.6A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | N-Channel | 100V | 330pF @ 25V | 30W (Tc) | 7.6A (Tc) | 10V | 200 mOhm @ 4.3A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | - |